The NRE-4000 is a stand alone Reactive Ion Etching (RIE) System with shower head gas distribution and water cooled RF platen. It has a stainless steel cabinet and a 13 cylindrical Aluminum chamber that opens from top for wafer loading. Chamber has two ports, one with a 2 window and the other with a blank off for diagnostics. It can accept up to 8 wafers. Chamber is extremely clean in design and reaches 10-6 Torr or lower base pressure depending on the pumping package. It can be operated in the pressure range of 20 mTorr to 8 Torr. Pumping package consists of a throttle valve, 250 l/sec corrosive turbomolecular pump, sieve filter, and a 10cfm mechanical pump
with fomblin oil. The RF power is provided by 600 W 13.5 MHz power supply and auto tuner. The self DC bias is continuously monitored and reaches as high as -500 V which is important for anisotropic etching. The system is completely automated and is PC controlled. The real time system pressure and DC bias is displayed in graphic format while flow and power is displayed in alpha numeric format. Four levels of password protected access: Operator, Engineering, Process and Maintenance. Allows running the system in semi-automatic mode (Engineering), writing recipes (Process) and executing recipes automatically (Operator).
Features:
Aluminum or Stainless Steel Chamber
Stainless Steel Cabinet
Capable of Etching Si Compounds (~400 Å /min) and Metals
8 Anodized RF Platen
Water Cooled and Heated RF Platen
Large Self Bias
Shower Head Gas Distribution
~ 10-6 Torr < 20 minutes, ~ 5x10-7 Torr Base Pressure
Turbomolecular Pump
Up to Four MFCs on NRE-3000 and up to Eight MFCs on NRE-4000
No Flexing of Gas Lines
Down Stream Pressure Control
Dual Etch Capability: RIE and Plasma Etch
End Point Detection
Pneumatically Lifted Top
Manual or Automatic Loading/Unloading
Load Lock
PC Controlled with LabVIEW
Recipe Driven, Password Protected
Fully Safety Interlocked
Optional ICP Source and Cryogenic Cooling of the Platen for Deep Si Etch
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