Atomic Layer Deposition Systems

Atomic Layer Deposition is a thin film deposition technique that allows putting defect-free conformal layers of atoms. The process consists of sequential introduction of desired precursor vapors with hydroxyl groups, each of which forms about one atomic layer per pulse. Key challenges relate to fast removal of gas in the chamber to enhance throughput as well as activation of Nitrogen to form stoichiometric compounds of nitrides.
NANO-MASTER, with extensive expertise in plasma processing and vacuum technology, is able to provide unique solutions on its Plasma Assisted ALD product line.
NLD-4000
• HfO2, Al2O3, TiO2, ZnO, ZrO2 and various other Films
• Growth <100 nm/hr, <1 nm Growth/Cycle • < 1% Thickness Variation, ~ 100% Step Coverage Film Conformality • 8”, 400 °C Platen, PID Controlled • Load Lock Chamber for Auto Load/Unload • Horizontal Gas Flow • ~ 5x10-7 Torr Base Pressure with 250 l/sec Corrosive Turbo Pump • Four 500 cc SS Electropolished Bubblers, Auto N2 or Ar Flushing • Optional Dual Chamber Showerhead RF Plasma Source 600 W RF • Power Supply and Auto Tuner or 1 KW ICP • PC Controlled, Fully Automated and Safety Interlocked