– Substrate size & load capacity : 6inch wafer – 1 wafer/batch
-ICP source : RF 2kW
-Bias power : RF 600W
– Chuck cooling method : Chiller + He cooling (by EPC controller)
-TMP + Rotary pump
-Throttle valve + APC controller
-Baratron gauge + Convectron gauge
– MFC: SF6, CF4, CHF3, C4F8, CCl2, O2, He
– Loadlock chamber (stand-alone type)
-PC control
ICP-RIE System
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