Plasma Assisted MOCVD Systems

NANO-MASTER has developed the first Table Top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) System for InGaN and AlGaN deposition processes. The features include five bubblers with individual cooling baths, heated gas lines, 950 °C platen, three gas rings, RF plasma source with shower head gas
distribution and N2 flush at the end of the process, 5×10-7 Torr base pressure, 250 l/sec turbo pump with oil-free scroll pump, PC controlled, fully automated and safety interlocked.
Recently this technology has been extended to five 4” wafer stand alone batch system which can be integrated into a cluster configuration to meet high throughput production needs.

NMC-3000 TableTop System
• Application: Green LED’s (GaN, InGaN, AlGaN, …)
• 950 °C Platen, 2” Wafer
• 5×10-7 Torr Base Pressure
• Five Bubblers: Precursors for In, Ga, Al and Two Dopants
• PC Controlled with LabVIEW
• Recipe Driven, Password Protected
• Fully Safety Interlocked

NMC-4000 Stand Alone System
• 14.5” Stainless Steel Cube Chamber
• One 6” Wafer with 8” Platen or Five 4” Wafers on 12” Platen
• RF Plasma Source with Auto Tuner
• 1100 °C Rotating Platen
• Manual or Automatic Wafer Loading and Unloading
• Compatible with Cluster Configuration