Single Wafer Cleaning, Resist Processing, and Wet Etching Technology

NANO-MASTER state-of-the-art Cleaning and Processing Technology incorporates patented damage free megasonic cleaning, chemical cleaning, brush cleaning, high pressure and drying in one process step. To achieve maximum cleaning optimization without substrate damage, the megasonic energy density must be kept slightly below the damage threshold at any point on the sample.

NANO-MASTER’s patented technology assures uniform distribution of the acoustic energy across the entire surface of the substrate allowing ideal cleaning by maximizing the distributed energy while staying below the sample’s damage threshold. Depending on the application, certain options will further enhance the tool’s ability to remove unwanted particles and residues.

Applications:
Cleaning Photoresist Processing
• Si Wafers • Resist Coating
• Saphire Wafers • Resist Lift-Off
• Chips on Wafer Frame • Resist Stripping with Piranha
• Display Panels
• ITO Coated Displays
• Patterned and Un-patterned Etching
Masks • Metal Etching of Al, Au, Cr, Ti
• Mask Blanks
• Pelliclized Reticles
• Contact Masks

Features:
• 21” OD, 15”x15” Substrates
• Large Environmental Chamber with Megasonic DI, Brush, Hot DI, High Pressure DI, Heated N2, Chemical Dispense Arm
• Variable Speed Brush with Chemical Dispense
• Touchscreen User Interface
• Manual Load and Unload
• Safety Interlocks and Alarm
• 30”D x 26”W Footprint
Options:
• Chemical Delivery Module
• Piranha Cleaning
• Ozonated DI Water (20 ppm of O3)
• Hydrogenated DI Water
• High Pressure DI Water
• Heated DI Water
• Separate Drains for Solvents and Acids
• IR Heating
• DI Water Recirculator
• Robotic Load/Unload Module
• Cluster System with EFEM and SMIF Interface

Piranha Cleaning

• H2SO4 and H2O2 Dispensed and Mixed on the Wafer
• IR Heating > 200 °C
• Brush Clean
• Megasonic DI Water Clean
• Heated N2 and Spin Dry

Resist Stripping / Lift Off

• NMP Dispense with IR Heating
• Brush Clean
• Megasonic DI Water Clean
• Heated N2 and Spin Dry

CMP Wafer Cleaning

• Removes CMP Particles with Brush and Megasonic DI Cleaning
• Chemical Dispense Arm
• Chemical Dispense Canisters
• Special Chucks for Front Side and Back Side Brush Cleaning
• Variable Speed (< 800 rpm) PVA Brush • Adjustable Brush/Wafer Contact Pressure • Chemical Dispense Through Brush Pelliclized/Unpelliclized Mask Cleaning • Full Cleaning without Necessity of Pellicle Replacement • Pellicle is Fully Protected • Pelliclized Mask Cleaning Process: 1) Back Side of the Mask is Cleaned Megasonic DI Clean Brush Clean Chemical Clean Heated N2 Spin Dry 2) Heated N2 Spin Dry