Semicon Front End Manufacturing Tools

– Substrate size & load capacity : 6inch wafer – 1 wafer/batch -ICP source : RF 2kW -Bias power : RF 600W – Chuck cooling method : Chiller + He cooling (by EPC controller) -TMP + Rotary pump -Throttle valve + APC controller -Baratron gauge + Convectron gauge – MFC: SF6, CF4, CHF3, C4F8, CCl2, […]

-Substrate size & load capacity : 200mm*200mm glass – 1 cassette/batch -Chemical bath(SUS316) 2ea -QDR bath(PVDF) 1ea -Sink bath(PP) 1ea – Ultra sonic(40kHz,600W) 1ea – DI generator DI Resistivity : 17 ~ 18.2 ?/? DI Productivity : 500LPH -RO Tank : 650L – PVC out plate -Manual control (switch panel & PLC)

NANO-MASTER has developed the first Table Top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) System for InGaN and AlGaN deposition processes. The features include five bubblers with individual cooling baths, heated gas lines, 950 °C platen, three gas rings, RF plasma source with shower head gas distribution and N2 flush at the end of […]

-Substrate size & load capacity : 20mm*20mm wafer – 1 wafer/batch -Target size : 1inch -Carrousel (1 target holder, Target rotation) – Furnace type 1-zone heater, max.1100? – Rotary pump -Manual angle valve -MFC: O2(100sccm) -Manual control (switch panel)

Atomic Layer Deposition is a thin film deposition technique that allows putting defect-free conformal layers of atoms. The process consists of sequential introduction of desired precursor vapors with hydroxyl groups, each of which forms about one atomic layer per pulse. Key challenges relate to fast removal of gas in the chamber to enhance throughput as […]

The NRE-4000 is a stand alone Reactive Ion Etching (RIE) System with shower head gas distribution and water cooled RF platen. It has a stainless steel cabinet and a 13” cylindrical Aluminum chamber that opens from top for wafer loading. Chamber has two ports, one with a 2” window and the other with a blank […]

Etching of metals which do not have volatile compounds such as Cu and Au cannot be accomplished in RIE Systems; however, physical etching with accelerating Ar ions is possible. Typically, surface is patterned with thick resist for masking and the energetic ion flux during etching overheats the substrate and the resist. Unless efficient means of […]